High quality plasma-enhanced chemical vapor deposited silicon nitride films
- IBM General Technology Division, Hopewell Junction, NY (United States)
The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.
- OSTI ID:
- 6253628
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:7; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
COMPRESSION
DATA
DEPOSITION
ELEMENTS
EXPERIMENTAL DATA
FILMS
HYDROGEN
INFORMATION
MECHANICAL PROPERTIES
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
NUMERICAL DATA
OPTICAL PROPERTIES
PARAMETRIC ANALYSIS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
PRESSURE DEPENDENCE
REFRACTIVE INDEX
SILICON COMPOUNDS
SILICON NITRIDES
STRESSES
SURFACE COATING
TEMPERATURE DEPENDENCE
TENSILE PROPERTIES