Characterization of plasma-enhanced chemical vapor deposited nitride films used in very large scale integrated applications

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2221635· OSTI ID:6149193

Stamper, A K; Pennington, S L ^[1]

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1. IBM Technology Products, Essex Junction, VT (United States)

Several PECVD SiN[sub x]H[sub y] processes used in VLSI applications are discussed. Films have been deposited in a 200-mm wafer single-chamber PecVD reactor. The processes are characterized in terms of deposition rates, uniformity across 200-mm silicon waters, conformality over metal lines, density, etch rates, polish rates, stress, index of refraction, and stoichiometry. PECVD nitride processes with high deposition rates and good conformality are presented along with processes with etch rates comparable to LPCVD nitride films.

• OSTI ID: 6149193
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:6; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ABSORPTION SPECTROSCOPY
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DATA
DENSITY
DEPOSITION
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
ELEMENTS
ETCHING
EXPERIMENTAL DATA
FABRICATION
FOURIER TRANSFORMATION
INFORMATION
INTEGRAL TRANSFORMATIONS
INTEGRATED CIRCUITS
ION MICROPROBE ANALYSIS
KINETICS
MASS SPECTROSCOPY
MICROANALYSIS
MICROELECTRONIC CIRCUITS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
NONDESTRUCTIVE ANALYSIS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REACTION KINETICS
REFRACTIVE INDEX
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SPECTROSCOPY
STOICHIOMETRY
STRESSES
SUBSTRATES
SURFACE COATING
SURFACE FINISHING
TRANSFORMATIONS