RF plasma enhanced vapor deposition and etching of silicon nitride
This is a report on the deposition and etching of silicon nitride films using RF plasma techniques. Experiments were conducted to determine optimum operating parameters (e.g., gas flow rates, temperature, power, and pressure) for the AMT (Applied Materials Technology) Plasma I reactor in both the deposition and etching modes of operation. Silane and ammonia with nitrogen as a carrier gas are used during deposition. Film properties were measured as selected operating parameters were changed in deposition experiments. Good quality Si/sub 3/N/sub 4/ films for semiconductor device passivation purposes were made in thicknesses of 300 to 10,000 A with refractive indices between 2.0 and 2.1 and at deposition rates of 250-300 A/min. The relatively low (approximately 300/sup 0/C) deposition temperature makes the process compatible with devices metallized with aluminum. Plasma etching of Si/sub 3/N/sub 4/ films using tetrafluoromethane with 8% oxygen added was successful using standard photoresists and at etch rates of 400-1000 A/min.
- Research Organization:
- Sandia Labs., Albuquerque, N.Mex. (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 5149775
- Report Number(s):
- SAND-77-2070
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
DEPOSITION
DIMENSIONS
ETCHING
FILMS
HIGH TEMPERATURE
NITRIDES
NITROGEN COMPOUNDS
PLASMA
PLASMA ARC SPRAYING
PNICTIDES
SILICON COMPOUNDS
SILICON NITRIDES
SPRAY COATING
SURFACE COATING
SURFACE FINISHING
THICKNESS