Poly-Si etching using electron cyclotron resonance microwave plasma sources with multipole confinement
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- SEMATECH, Austin, Texas 78741 (United States)
In this study, mirror field and single coil 2.45 GHz electron cyclotron resonance microwave plasma sources were coupled to a multipole, multicusp plasma confinement system and used to produce chlorine plasmas for poly-Si etching. Scanning Langmuir probes were used to study the effect of process parameters on plasma potentials, plasma density, plasma density uniformity, and electron temperature, while poly-Si etching experiments on 150 mm diam wafers were used to relate process parameters and Langmuir probe results to etch rate, SiO{sub 2} selectivity, photoresist selectivity, and etch uniformity. Radio-frequency substrate bias at 13.56 MHz was used for ion energy control, and the addition of a third coil below the substrate plane was found useful for fine-tuning the radial plasma uniformity. Undoped poly-Si etch rates {gt}3000 A/min, Si/SiO{sub 2} etch selectivities {gt}25 and 150 mm diam etch uniformities {lt}2% at 1 {sigma} were obtained, but not simultaneously. Tradeoffs in choosing operating conditions for optimum poly-Si etch performance will be discussed.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 7034541
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 10:4; ISSN 0734-2101; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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US DOE
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