A new supermagnetron plasma etcher remarkably suited for high performance etching

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6111872

Kinoshita, Haruhisa ^[1]; Matsumoto, Osamu ^[2]

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1. Shizuoka Univ., Hamamatsu (Japan)
2. Kokusai Electric Co., Ltd., Tokyo (Japan)

A new type plasma etcher named a supermagnetron plasma etcher equipped with two parallel cathodes and an annular permanent magnet was developed. Using the supermagnetron plasma etcher, two kinds of experiments for the high rate etching of SiO{sub 2} and the highly uniform etching of photoresist and SiO{sub 2} under a stationary magnetic field were investigated. In the etchings of 6-in.-diam bare and patterned SiO{sub 2} wafers, high etch rates of 570 and 710 nm/min were obtained, respectively, using C{sub 2}F{sub 6} gas of 7.5 m Torr. The etch selectivities of SiO{sub 2} to Si became as high as 6-15 using CHF{sub 3} gas at 3-6 m Torr. In a stationary magnetic field, the highly uniform etching of photoresist and SiO{sub 2} were also obtained using two types of supermagnetron plasma etchers. The etch uniformities depend on rf powers supplied to the upper and lower cathodes, gas pressures, and the position of a magnet, etc. High etch uniformities depend on rf powers supplied to the upper and lower cathodes, gas pressure, and the position of a magnet, etc. High etch uniformities of {plus minus} 5% were obtained without the rotation of a magnetic field in the etching of 3-in.-diam photoresist film and 6-in.-diam SiO{sub 2} at phase differences of rf voltages of about 180 and 250 degrees, respectively. Applying the CHF{sub 3} and O{sub 2} supermagnetron plasmas to submicron pattern etchings, SiO{sub 2} contact holes with tapered side walls and photoresist lines with vertical side walls were obtained, respectively.

• OSTI ID: 6111872
• Report Number(s): CONF-9009402-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; Conference: Workshop on high-density plasma techniques and processes for integrated circuit fabrication, Burlingame, CA (United States), 11-12 Sep 1990; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
PLASMA GUNS
TECHNOLOGY ASSESSMENT
SILICON OXIDES
ETCHING
CARBON FLUORIDES
FABRICATION
INTEGRATED CIRCUITS
MAGNETRONS
MASKING
PLASMA PRODUCTION
CARBON COMPOUNDS
CHALCOGENIDES
ELECTRON TUBES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture