GaInAsP/InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens

Journal Article · Mon Mar 26 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102520· OSTI ID:6858008

Liau, Z L; Walpole, J N; Missaggia, L J; Mull, D E ^[1]

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1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073 (USA)

A new surface-emitting diode laser has been demonstrated, which consists of a buried-heterostructure waveguide gain region on one side of the substrate and a bifocal microlens of 210 {mu}m diameter on the other side. The bifocal microlens is composed of a collimating lens in the center (70 {mu}m diameter) and a spherical mirror in the surrounding region, for output collimation and optical feedback, respectively. Accurate alignment between the gain region and the microlens has been obtained by using the focused light spot produced by the latter. Initial device results show room-temperature pulsed threshold currents around 92 mA (with a low of 70 mA) and far-field patterns with a narrow central lobe of 1.25{degree}.

• OSTI ID: 6858008
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LENSES
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT