GaInAsP/InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens

Technical Report · Mon Mar 26 04:00:00 EST 1990

OSTI ID:6661404

Liau, Z L; Walpole, J N; Missaggia, L J; Mull, D E

A new surface-emitting diode laser has been demonstrated, which consists of a buried-heterostructure waveguide gain region on one side of the substrate and a bifocal microlens of 210 microns diameter on the other side. The bifocal microlens is composed of a collimating lens in the center (70 microns diameter) and a spherical mirror in the surrounding region, for output collimation and optical feedback, respectively. Accurate alignment between the gain region and the microlens has been obtained by using the focused light spot produced by the latter. Initial device results show room-temperature pulsed threshold currents around 92 mA (with a low of 70 mA) and far-field patterns with a narrow central lobe of 1.25. Surface-emitting diode laser, Buried-heterostructure waveguide lasers, Bifocal microlens.

• Research Organization: Massachusetts Inst. of Tech., Lexington, MA (USA). Lincoln Lab.
• OSTI ID: 6661404
• Report Number(s): AD-A-221418/7/XAB; JA--6405
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ACCURACY
ALIGNMENT
AMBIENT TEMPERATURE
AMPLIFICATION
COLLIMATORS
CURRENTS
DESIGN
ELECTRIC CURRENTS
FEEDBACK
GAIN
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
LENSES
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SUBSTRATES
THRESHOLD CURRENT
WAVEGUIDES