Static characteristics of 1. 5-1. 6 micron GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers

Journal Article · Tue Jan 31 23:00:00 EST 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072354· OSTI ID:6418540

Tanbun-Ek, T; Suzaki, S; Min, W S; Suematsu, Y; Koyama, F; Arai, S

Attention is given to the 1.5-1.6 micron dynamic single mode operation of GaInAsP/InP buried heterostructure, butt-jointed, built-in distributed Bragg reflector (DBR) integrated lasers. A coupling coefficient of more than 95 percent is estimated between the active region and the butt-jointed external waveguide region. When the lasers were operated in CW conditions at room temperature, with a threshold current of about 100 mA, single longitudinal mode operation was observed with a temperature dependence of about 0.13 nm/deg, over a temperature range of 50-65 C. The output spectrum below threshold indicated the strong wavelength selectivity of the DBR region, and the net gain difference between the main DBR mode and the adjacent submode was measured to be about 6/cm. 25 references.

• Research Organization: Tokyo Inst. of Tech., Japan
• OSTI ID: 6418540
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MODE CONTROL
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
WAVEGUIDES