Relative free energies of Si surfaces

Journal Article · Mon Mar 08 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108760· OSTI ID:6857497

Follstaedt, D M ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

Cavities are formed by ion implanting (001) Si with He and annealing at 800 [degree]C to enlarge and to remove the He. Subsequent annealing at 600 [degree]C results in cavities with well-defined facets as seen in [110] cross section with transmission electron microscopy. The most frequently observed facets are [l brace]111[r brace] planes. A rounded surface is seen about the [001] direction of all cavities, and (1[bar 1]0) facets are seen less frequently. The cavities allow the equilibrium crystal shape of Si to be examined and the relative free energies of the observed planes to be measured. The surface free energies of [l brace]001[r brace] and [l brace]110[r brace] planes are found to be 1.09[plus minus]0.07 and 1.07[plus minus]0.03 times that of [l brace]111[r brace] planes, respectively.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6857497
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:10; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
CAVITIES
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
FREE ENERGY
HEAT TREATMENTS
HELIUM IONS
ION IMPLANTATION
IONS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SURFACE ENERGY
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY
VOIDS