Cavities in He-implanted Si: Internal'' surface science

Conference · Wed Jan 01 04:00:00 EST 1992

OSTI ID:6827793

Follstaedt, D M; Myers, S M; Stein, H J

The concept of using internal cavities in semiconductors for surface studies is presented. The microstructures of He-implanted (001) Si are characterized with [110] cross-section TEM, which shows that internal areas 5--7 times that of the specimen front surface are achieved with 1 [times] 10[sup 17] He/cm[sup 2] implanted at 30 keV and annealed at 700 or 800[degrees]C. Examples using internal cavities to determine surface bond strengths of other elements adsorbed on Si are indicated. Facets on the cavities are used to examine the equilibrium crystal shape of Si and to measure the ratios of the surface free energies of the observed planes. The (111) planes have the lowest energy, and those of (001) and (110) are 1.09(7) and 1.07(3) times higher, respectively. We also find cavities in He-implanted Ge after annealing that can be used for similar studies.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6827793
• Report Number(s): SAND-92-1367C; CONF-921101--64; ON: DE93005340
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAVITIES
CHARGED PARTICLES
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
ENERGY RANGE
FREE ENERGY
HELIUM IONS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SURFACE ENERGY
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY