Cavities in He-implanted Si: ``Internal`` surface science

Conference · Thu Dec 31 04:00:00 EST 1992

OSTI ID:10121460

Follstaedt, D M; Myers, S M; Stein, H J

The concept of using internal cavities in semiconductors for surface studies is presented. The microstructures of He-implanted (001) Si are characterized with [110] cross-section TEM, which shows that internal areas 5--7 times that of the specimen front surface are achieved with 1 {times} 10{sup 17} He/cm{sup 2} implanted at 30 keV and annealed at 700 or 800{degrees}C. Examples using internal cavities to determine surface bond strengths of other elements adsorbed on Si are indicated. Facets on the cavities are used to examine the equilibrium crystal shape of Si and to measure the ratios of the surface free energies of the observed planes. The (111) planes have the lowest energy, and those of (001) and (110) are 1.09(7) and 1.07(3) times higher, respectively. We also find cavities in He-implanted Ge after annealing that can be used for similar studies.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10121460
• Report Number(s): SAND--92-1367C; CONF-921101--64; ON: DE93005340
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605
665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAVITIES
CRYSTALLOGRAPHY
HELIUM IONS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
ION IMPLANTATION
KEV RANGE 10-100
MICROSTRUCTURE
RADIATION EFFECTS
SILICON
SURFACE ENERGY
TRANSMISSION ELECTRON MICROSCOPY