Cavity nucleation and evolution in He-implanted Si and GaAs

Conference · Fri Dec 01 04:00:00 EST 1995

OSTI ID:164459

Follstaedt, D M; Myers, S M; Petersen, G A; Barbour, J C

The criteria for forming stable cavities by He{sup +} implantation and annealing are examined for Si and GaAs. In Si, implanting at room temperature requires a minimum of 1.6 at. % He to form a continuous layer of cavities after annealing at 700{degrees}C. The cavities are located at dislocations and planar defects. Implanting peak He concentrations just above this threshold produces narrow layers of cavities at the projected range. In GaAs, room-temperature implantation followed by annealing results in exfoliation of the surface layer. Cavities were formed instead by implanting Ar followed by overlapping He, both at 400{degrees}C, with additional annealing at 400{degrees}C to outgas the He. This method forms 1.5--3.5 nm cavities that are often on [111] planar defects.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 164459
• Report Number(s): SAND--95-1383C; CONF-951155--9; ON: DE96003073
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CAVITATION
GALLIUM ARSENIDES
HELIUM IONS
ION IMPLANTATION
MICROSTRUCTURE
NUCLEATION
SEMICONDUCTOR MATERIALS
SILICON