High-resolution composition profiling of GaAs-Al/sub x/Ga/sub 1-x/As double-hetero-laser structures with photoluminescence

Journal Article · Mon May 01 00:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325179· OSTI ID:6847056

Monemar, B

Measurements of composition of multilayer semiconductor laser wafers were performed with the aid of photoluminescence spectra. Reliable depth profiling of composition is difficult in as-grown wafers, even at low temperature, because the excess-carrier diffusion length is comparable to the layer thicknesses. With adequate reduction of the diffusion length, which in our case was done with ion implantation, the origin of photoluminescence could be restricted to a narrow region close to the excited surface. Samples were prepared for profiling by an angle-etching technique, leaving a controlled angle as small as 0.01/sup 0/ across the wafer, which greatly simplifies profiling measurements. Results from composition profiling of a conventional five-layer GaAs-Al/sub x/Ga/sub 1-x/As DH-laser wafer with a depth resolution better than 0.1 ..mu..m are presented.

• Research Organization: IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
• OSTI ID: 6847056
• Journal Information: J. Appl. Phys.; (United States), Vol. 49:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
QUANTITATIVE CHEMICAL ANALYSIS
ALUMINIUM ARSENIDES
CHEMICAL COMPOSITION
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
RESOLUTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL ANALYSIS
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)