Electronic structure of Si(111)-B( radical 3 times radical 3 ) R 30 degree studied by Si 2 p and B 1 s core-level photoelectron spectroscopy
Journal Article
·
· Physical Review, B: Condensed Matter; (USA)
- IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (USA)
An investigation of the Si(111)-B({radical}3 {times} {radical}3 ){ital R}30{degree} system has been performed using high-resolution photoelectron spectroscopy of the Si 2{ital p} core level and polarization-dependent studies of the B 1{ital s} absorption edge. Least-squares analysis of the Si 2{ital p} core-level line shape reveals that it comprises a bulk component and a surface component shifted by 0.40{plus minus}0.02 eV to higher binding energy. The exceptionally large surface-to-bulk ratio that is observed in this system suggests that the range of influence of the B atoms extends to more than 1 monolayer of Si atoms. The magnitude of the surface-to-bulk ratio is consistent with a model in which B occupies a subsurface site below a Si adatom. The B 1{ital s} edge contains a feature which is excited by the component of the electric field vector perpendicular to the surface. We argue that this arises from an electronic transition from the B 1{ital s} level into an empty surface orbital, orientated perpendicularly to the surface. We also study the change of the electronic structure as the surface is covered with Si, thereby producing a buried {delta}-doping layer.
- OSTI ID:
- 6836837
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:11; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
BAND THEORY
BINDING ENERGY
BORON
BORON COMPOUNDS
BORON SILICIDES
CHEMICAL REACTIONS
CHEMISORPTION
CRYSTAL STRUCTURE
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY
ENERGY LEVELS
EPITAXY
P STATES
PHOTOELECTRON SPECTROSCOPY
S STATES
SEMIMETALS
SEPARATION PROCESSES
SILICIDES
SILICON
SILICON COMPOUNDS
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
VALENCE
360602* -- Other Materials-- Structure & Phase Studies
BAND THEORY
BINDING ENERGY
BORON
BORON COMPOUNDS
BORON SILICIDES
CHEMICAL REACTIONS
CHEMISORPTION
CRYSTAL STRUCTURE
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY
ENERGY LEVELS
EPITAXY
P STATES
PHOTOELECTRON SPECTROSCOPY
S STATES
SEMIMETALS
SEPARATION PROCESSES
SILICIDES
SILICON
SILICON COMPOUNDS
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
VALENCE