Surface states and alkali-to-semiconductor charge transfer in the K/Si(111)( radical 3 times radical 3 ) R (30 degree )-B system
- AT T Bell Laboratories, Murray Hill, NJ (USA)
High-resolution core-level x-ray photoemission and photoabsorption studies of potassium adsorption on the Si(111)({radical}3 {times} {radical}3 ){ital R}(30{degree})-B surface show a large core-level shift ({similar to}1.2 eV) for both B(1{ital s}) and Si(2{ital p}) states, in contrast to results from alkali adsorption on other Si surfaces where little or no shift is observed for Si(2{ital p}) states. We interpret these large shifts in terms of a large charge transfer from potassium to the Si-substrate dangling-bond state, possible because of the B-induced removal of filled clean-surface band-gap states. These new results suggest that, in general, charge transfer in the alkali-semiconductor surface bonding is determined by the occupation of band-gap states at the clean surface.
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 6182285
- Journal Information:
- Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 65:17; ISSN PRLTA; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
ALKALI METALS
ALLOYS
BORON ADDITIONS
BORON ALLOYS
CHARGE EXCHANGE
CHEMICAL BONDS
CHEMICAL SHIFT
COHERENT SCATTERING
COVERINGS
DATA
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY
ENERGY LEVELS
EXPERIMENTAL DATA
INFORMATION
INTERFACES
IONIZING RADIATIONS
KINETIC ENERGY
METALS
NUMERICAL DATA
PHOTOELECTRON SPECTROSCOPY
POTASSIUM
RADIATIONS
RESOLUTION
SCATTERING
SEMIMETALS
SILICON
SPECTROSCOPY
X RADIATION