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Potassium adsorption on the Si(100)(2 times 1) surface studied by Si and K core level photoemission and photoabsorption spectroscopy

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.578011· OSTI ID:7038904
 [1]; ; ;  [2]
  1. Molecular Science Research Center, Pacific Northwest Labs, Richland, Washington 99352 (United States)
  2. AT T Bell Labs, Murray Hill, New Jersey 07974 (United States)
The questions of K--Si bonding and the K adsorption site of the K/Si(100)(2{times}1) surface system are studied by Si and K 2{ital p} core level photoabsorption and photoemission spectroscopy as a function of K coverage and incident x-ray polarization. An unoccupied K 4{ital s} derived surface state is found in the K {ital L}-edge spectra that is coverage as well as polarization dependent. It is also found that the {pi}* state of the surface Si dimer is eliminated by the potassium adsorption, indicating that there is some degree of charge transfer from K to the substrate. The K--Si bond is thus characterized as of mixed covalent/ionic type. The polarization dependence suggests that the Si--K bond is inclined towards the surface plane.
DOE Contract Number:
AC02-76CH00016
OSTI ID:
7038904
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 10:4; ISSN 0734-2101; ISSN JVTAD
Country of Publication:
United States
Language:
English