Adatom location on the Si(111) 7[times]7 and Si(111) [radical]3[times][radical]3--In surfaces by the x-ray standing wave and photoemission techniques

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.578333· OSTI ID:6300641

Woicik, J C ^[1]; Kendelewicz, T ^[2]; Herrera-Gomez, A ^[2]; Andrews, A B; Kim, B S ^[3]; Cowan, P L ^[4]; Miyano, K E ^[5]; Bouldin, C E ^[1]; Karlin, B A ^[6]; Herman, G S ^[7]; Erskine, J L ^[3]; Pianetta, P; Spicer,

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1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
2. Stanford Electronics Laboratory, Stanford University, Stanford, California 94305 (United States)
3. University of Texas, Austin, Texas 78712 (United States)
4. Argonne National Laboratory, Argonne, Illinois 60439 (United States)
5. Department of Physics, Tulane University, New Orleans, Louisiana 70118 (United States)
6. National Synchrotron Light Source, Upton, New York, 11973 (United States)
7. Naval Research Laboratory, Washington, DC 20175 (United States)

The x-ray standing wave technique has been used to determine the adatom positions on the Si(111) 7[times]7 and Si(111) [radical]3[times][radical]3--In surfaces. By monitoring the intensity of the surface sensitive Si 1[ital s] photopeak as a function of photon energy around the Si(111) Bragg backreflection condition, we determine the Si adatoms of the clean 7[times]7 surface to reside 1.69[plus minus]0.1 A above the extrapolated Si(111) bulk plane. In contrast, the In adatoms on the 1/3 monolayer [radical]3[times][radical]3--In surface are found to remove the Si displacements and lie at a position of 2.11[plus minus]0.05 A. High-resolution Si 2[ital p] core-level measurements support the [ital T][sub 4] geometry for the In adatom location.

• OSTI ID: 6300641
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 11:4; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ADSORPTION
COHERENT SCATTERING
DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
INDIUM
INTERFACES
METALS
PHOTOELECTRON SPECTROSCOPY
SCATTERING
SEMIMETALS
SILICON
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
STANDING WAVES
SURFACE PROPERTIES
X-RAY DIFFRACTION