Site-Specific Displacement of Si Adatoms on Si(111)-(7{times}7)

Journal Article · Sun Nov 30 23:00:00 EST 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.4397· OSTI ID:550567

Stipe, B C; Rezaei, M A; Ho, W ^[1]

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1. Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, New York 14853 (United States)

Tunneling and field-emitted electrons from the tip of a scanning tunneling microscope were used to reversibly displace Si adatoms on Si(111)-(7{times}7) at 30 to 175K. Displacement rates were determined as a function of current, sample bias voltage, and lateral distance from the tip. The displacement is found to be site specific, with {ital strong } preference for center Si adatoms in the faulted half of the unit cell. Si adatoms return to the normal site by the same method or by annealing above 155K with an activation energy of 0.49{plus_minus}0.03 eV and preexponential of 10{sup 12.2{plus_minus}0.9} s{sup {minus}1} . {copyright} {ital 1997} {ital The American Physical Society}

• DOE Contract Number: FG02-91ER14205
• OSTI ID: 550567
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 22 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ADSORPTION
ANNEALING
FIELD EMISSION
MICROSCOPY
SILICON
TUNNEL EFFECT