Site Hopping of Single Chemisorbed Oxygen Molecules on Si(111)-(7{times}7) Surfaces

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.78.4797· OSTI ID:531868

Hwang, I; Lo, R; Tsong, T T ^[1]

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1. Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Republic of (China)

We observe directly the site hopping motion of a molecular O{sub 2} species on Si(111)-(7{times}7) surfaces using a variable-temperature scanning tunneling microscopy. At the temperature range of our observation, the hopping is mainly confined to one-half of the 7{times}7 unit cell between adjacent 7{times}7 adatom sites. Through Arrhenius plots, the activation energies for the hopping between different atomic sites are derived. We also resolve two short-lived intermediate states which mediate the site hopping. An atomic mechanism is proposed to explain the molecular hopping process. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 531868
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 25 Vol. 78; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
ARRHENIUS EQUATION
CHEMISORPTION
DYNAMICS
MOTION
OXYGEN
SILICON
SURFACES