Atomic origins of surface core levels on Si(111)-(7 times 7) studied by site-dependent Ge substitution

Journal Article · Fri Feb 14 23:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.45.3811· OSTI ID:7207088

Carlisle, J A; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)

Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7{times}7) surfaces. The surface components of the Si 2{ital p} and Ge 3{ital d} core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2{ital p} core to be derived from adatom emission. Implications in regard to adatom--rest-atom charge transfer are discussed.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 7207088
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 45:7; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ANNEALING
BINDING ENERGY
BREMSSTRAHLUNG
CRYSTALS
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
ENERGY
GERMANIUM ADDITIONS
GERMANIUM ALLOYS
HEAT TREATMENTS
MONOCRYSTALS
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SEMIMETALS
SILICON
SURFACE PROPERTIES
SYNCHROTRON RADIATION