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Extended photoemission fine structure analysis of the Si(111)-(7[times]7) surface core levels

Journal Article · · Physical Review Letters; (United States)
; ; ;  [1]
  1. Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801 (United States) Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)

The surface- and bulk-derived components of the Si 2[ital p] core levels, acquired by photoemission from Si(111)-(7[times]7), show strong and different oscillations caused by extended fine structure above the 2[ital p] edge. An analysis of these oscillations yields the bulk and surface bond lengths which agree well with the known structure. The heretofore controversial issues of the photoemission escape depth and the atomic origin of the surface core levels are resolved.

DOE Contract Number:
FG02-91ER45439
OSTI ID:
5723488
Journal Information:
Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 71:18; ISSN 0031-9007; ISSN PRLTAO
Country of Publication:
United States
Language:
English