Photoemission Extended Fine Structure Study of the SiO{sub 2}/Si(111) Interface

Journal Article · Sun Sep 01 00:00:00 EDT 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.77.2758· OSTI ID:385749

Sieger, M T; Luh, D A; Miller, T; Chiang, T ^[1]

---

1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)

High-resolution Si 2{ital p} core level photoemission spectra of the SiO{sub 2}/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 385749
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 13 Vol. 77; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BOND LENGTHS
CORE LEVELS
ELECTRONIC STRUCTURE
FINE STRUCTURE
INTERFACE STRUCTURE
INTERFACES
PHOTOEMISSION
SILICON
SILICON OXIDES