Statistical Cross-Linking at the Si(111)/SiO{sub 2} Interface

Journal Article · Wed Oct 01 00:00:00 EDT 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.3014· OSTI ID:543844

Luh, D; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)

Angle-resolved photoemission measurements of the Si 2p core level as a function of polar emission angle were carried out to investigate the atomic populations and depth distributions of Si in various oxidation states for a SiO{sub 2} film thermally grown on Si(111). The suboxide states including Si{sup 1+} , Si{sup 2+} , and Si{sup 3+} exhibit different depth distributions. Despite these differences, the results are consistent with a chemically abrupt interface. A simple model based on the statistical cross-linking of dangling bonds between a bulk-truncated Si and an amorphous SiO{sub 2} layer explains our observations. {copyright} {ital 1997} {ital The American Physical Society}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 543844
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 16 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
CHEMICAL BONDS
ELECTRONIC STRUCTURE
INTERFACES
PHOTOEMISSION
SILICON
SILICON OXIDES
SYNCHROTRON RADIATION
THIN FILMS