Localization and crystallographic dependence of Si suboxide species at the SiO/sub 2//Si interface

Journal Article · Thu Jan 15 04:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338215· OSTI ID:6815035

Grunthaner, P J; Hecht, M H; Grunthaner, F J; Johnson, N M

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si/sup +1/, Si/sup +2/, and Si/sup +3/ suboxide states at the SiO/sub 2//Si interface for (100)- and (111)-oriented substrates with gate oxide quality thermal oxides. The Si/sup +1/ and Si/sup +2/ states are localized within 6--10 A of the interface while the Si/sup +3/ state extends --30 A into the bulk SiO/sub 2/. The distribution of Si/sup +1/ and Si/sup +2/ states shows a strong crystallographic dependence with Si/sup +2/ dominating on (100) substrates and Si/sup +1/ dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si/sup +1/ and Si/sup +2/ states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO/sub 2//Si interface corresponds to 94% and 83% of a monolayer for these (100) and (111) substrates, respectively. We speculate that the remaining interfacial substrate Si atoms that are not associated with bonding to oxygen are bonded to impurity species.

• Research Organization: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
• OSTI ID: 6815035
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
IMPURITIES
INTERFACES
IONIZING RADIATIONS
IONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
RADIATIONS
SECONDARY EMISSION
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON IONS
SILICON OXIDES
SPECTROSCOPY
X RADIATION