Atomically resolved adsorption and scanning tunneling microscope induced desorption on a semiconductor: NO on Si(111)-(7{times}7)

Journal Article · Mon Mar 01 04:00:00 EST 1999 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.478390· OSTI ID:321470

Rezaei, M A; Stipe, B C; Ho, W ^[1]

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1. Laboratory of Atomic and Solid State Physics and Center for Materials Research, Cornell University, Ithaca, New York 14853 (United States)

Using a variable-temperature, ultrahigh vacuum scanning tunneling microscope (STM), we have studied the adsorption and STM induced desorption of NO from Si(111)-(7{times}7). NO adsorbs preferentially on faulted corner sites, followed by faulted center sites, unfaulted corner sites and unfaulted center sites. The preference for the different adsorption sites is independent of temperature and correlates well with the local density of states at these sites. NO can be desorbed from Si(111) with the STM. We present data that suggest the desorption is induced by the electric field under the STM tip. The threshold positive electric field for desorption of NO is 0.114 {plus_minus} 0.009 V/{Angstrom}. For sufficiently small tip{endash}surface distances, NO can be desorbed locally without affecting the neighboring adsorbates. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 321470
• Journal Information: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 10 Vol. 110; ISSN JCPSA6; ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ADSORBENTS
ADSORPTION
DESORPTION
DISSOCIATION
ELECTRIC FIELDS
NITRIC OXIDE
NITROGEN COMPOUNDS
SCANNING ELECTRON MICROSCOPY
SILICON