Inducing and imaging single molecule dissociation on a semiconductor surface: H{sub 2}S and D{sub 2}S on Si(111)-7{times}7

Journal Article · Thu Oct 01 04:00:00 EDT 1998 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.477233· OSTI ID:659304

Rezaei, M A; Stipe, B C; Ho, W ^[1]

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1. Laboratory of Atomic and Solid State Physics and Center for Materials Research, Cornell University, Ithaca, New York 14853 (United States)

Using a variable-temperature, ultrahigh vacuum scanning tunneling microscope (STM), we have induced and imaged the dissociation of H{sub 2}S and D{sub 2}S on Si(111)-7{times}7. H{sub 2}S and D{sub 2}S adsorb dissociatively at low coverage, from 50 to 300 K. Individual HS (or DS) fragments can be further dissociated with the STM at low temperatures without affecting neighboring adsorbates. The hydrogen (deuterium) atom either desorbs or re-attaches to a nearby silicon atom. Near room temperature (297 K) and above, DS dissociates thermally, with an activation barrier of 0.73{plus_minus}0.15 eV. The activation barrier was calculated from atomistic studies of the dissociation rates at temperatures between 297 and 312 K. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 659304
• Journal Information: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 14 Vol. 109; ISSN JCPSA6; ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
66 PHYSICS
ADSORPTION
CATALYSIS
DEUTERIUM COMPOUNDS
DISSOCIATION
HYDROGEN COMPOUNDS
HYDROGEN SULFIDES
IMAGES
SCANNING ELECTRON MICROSCOPY
SILICON
SURFACES