Imaging the atomically resolved dissociation of D{sub 2}S on Si(100) from 80 to 300 K
Journal Article
·
· Journal of Chemical Physics
- Laboratory of Atomic and Solid State Physics and Center for Materials Research, Cornell University, Ithaca, New York 14853 (United States)
Using a variable-temperature, ultrahigh vacuum scanning tunneling microscope (STM), we have induced and imaged and dissociation of D{sub 2}S on Si(100). D{sub 2}S dissociates into DS and D below 200 K. Individual DS fragments can be dissociated with the STM at low temperatures. The deuterium atom attaches to a neighboring silicon dimer. At 200 K or above, D{sub 2}S dissociates into S and two Ds. D{sub 2}S adsorption affects the surface reconstruction on Si(100), from the buckled dimer configuration to the dynamically flipping configuration and vice versa. We discuss our results in the context of other experiments on the same and similar systems. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 304232
- Journal Information:
- Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 7 Vol. 110; ISSN JCPSA6; ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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