Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)

Journal Article · Sun Aug 01 04:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.4458· OSTI ID:362689

Khare, S V; Kulkarni, R V; Stroud, D; Wilkins, J W ^[1]

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1. Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)

We report an {ital ab initio} study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the {ital D} dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the {ital D} configuration to be most stable. Our theoretical STM images for this system find that both the {ital D} and {ital C} configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the {ital D} and {ital C} configurations. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 362689
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
DIMERS
ELECTRON MICROSCOPY
GERMANIUM
GROWTH
SILICON