Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)
- Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)
We report an {ital ab initio} study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the {ital D} dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the {ital D} configuration to be most stable. Our theoretical STM images for this system find that both the {ital D} and {ital C} configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the {ital D} and {ital C} configurations. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 362689
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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