Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors
- NTT Applied Electronics Laboratories, Musashino-shi, Tokyo 180, Japan (JP)
A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl{sub 2} gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using a graded-index separate-confinement-heterostructure single quantum well laser wafer. A threshold current of 75 mA and a light output power of over 5 mW are obtained with a 40-{mu}m-wide and 300-{mu}m-long mesa stripe structure. Totally reflecting mirror loss is estimated from measurements of the threshold current density for different cavity lengths. The loss of the totally reflecting mirror is about 0.95 dB per reflection.
- OSTI ID:
- 6834119
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:17; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ENERGY LOSSES
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MIRRORS
LASERS
LOSSES
MIRRORS
OPERATION
PERFORMANCE
PNICTIDES
POWER LOSSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT