Surface-emitting GaAs/AlGaAs lasers with dry-etched 45/degree/ total reflection mirrors
Journal Article
·
· Appl. Phys. Lett.; (United States)
Surface-emitting GaAs/AlGaAs lasers with 45/degree/ total reflection mirrors havebeen successfully produced using a 45/degree/ tilted reactive ion beam etchingtechnique. The ratio of surface-emitted light output power to edge-emitted lightoutput power was obtained at values as high as 77%. The total reflection mirrorwas formed within 1/degree/ of the desired precise 45/degree/ angle. This type ofsurface-emitting laser is promising for optoelectronic integrated circuitsbecause of the simplicity of its structure and fabrication.
- Research Organization:
- Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 213, Japan(JP)
- OSTI ID:
- 5991565
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:24; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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