Characteristics of single- and two-dimensional phase coupled arrays of vertical cavity surface emitting GaAs-AlGaAs lasers
- AT and T Bell Lab., Murray Hill, NJ (US)
- Univ. of Texas, Austin, TX (US)
Two-dimensional arrays of 3 {times} 3 vertical cavity surface emitting GaAs-AlGaAs lasers with 7 {mu}m center spacing are described. The lasers were grown by molecular beam epitaxy and contain one grown GaAs-AlAs mirror under the active layer and a second, thermally deposited, high reflectivity, SiO{sub 2}-Si mirror on top of the epitaxial layer. The array has a 295 K threshold of 90 mA, corresponding to 10 mA per laser. The individual lasers in the array have Gaussian beam profiles both spatially in the near field and angularly in the far field. When all of the lasers in the array are operating in a coupled manner the emission exhibits a lobed far-field pattern with a 5{degrees} separation in the direction parallel to the contact edge, and a 2.5{degrees} separation perpendicular to the contact edge.
- OSTI ID:
- 5726792
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:11; ISSN 0018-9197; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
ELEMENTS
ENERGY
EPITAXY
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAUSS FUNCTION
HETEROJUNCTIONS
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
MINERALS
MIRRORS
MOLECULAR BEAM EPITAXY
OPERATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLID STATE LASERS
THRESHOLD ENERGY