Excimer laser-processed oxide-passivated silicon solar cells of 19. 5-percent efficiency

Journal Article · Fri May 01 04:00:00 EDT 1987 · IEEE Electron Device Lett.; (United States)

DOI:https://doi.org/10.1109/EDL.1987.26619· OSTI ID:6833345

Wood, R F; Westbrook, R D; Jellison, Jr, G E

Single-crystal p/sup +/ -n-n/sup +/ silicon solar cells with AM1.5 efficiencies exceeding 19.5 percent have been fabricated using glow-discharge implantation and pulsed excimer laser annealing, together with techniques for reducing the recombination current. These techniques include intrinsic passivation by thermal oxide growth and fine-line photolithography for metallization in order to reduce the area of metal-silicon contact. These are the highest efficiency ion-implanted nonconcentrator cells reported to date and to our knowledge they are the highest efficiency p-on-n cells made by any technique.

• Research Organization: Solid State Div., Oak Ridge National Lab., Oak Ridge, TN (US)
• OSTI ID: 6833345
• Journal Information: IEEE Electron Device Lett.; (United States), Journal Name: IEEE Electron Device Lett.; (United States) Vol. EDL-8:5; ISSN EDLED
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL GROWTH
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC DISCHARGES
EQUIPMENT
EXCIMER LASERS
FABRICATION
GAS LASERS
GLOW DISCHARGES
HEAT TREATMENTS
ION IMPLANTATION
LASERS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PULSE TECHNIQUES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TECHNOLOGY ASSESSMENT