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U.S. Department of Energy
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Beam processing for high-efficiency Si solar cells

Conference ·
OSTI ID:5612939
High-efficiency silicon solar cells have been made using two different techniques for dopant implantation and two types of lasers for annealing of the implantation damage. Regardless of the type of lasers used for the annealing, a 1-KeV glow discharge BF/sub 3/ implantation gave higher-efficienty solar cells than conventional mass-analyzed 5 kV /sup 11/B implantation. The implanted layers were annealed with XeCl excimer and ruby lasers. Excimer laser annealing was found to give superior results. Spectral-response measurements showed that the higher efficiencies were the result of an improved blue response. The use of glow discharge BF/sub 3/ implantation and excimer laser annealing resulted in P/sup +/n cells with AM1 efficiencies greater than 16.5%, as measured at the Solar Energy Research Institute.
Research Organization:
Oak Ridge National Lab., TN (USA); Helionetics, Inc., Oak Ridge, TN (USA). Laser Processing Lab.; Helionetics, Inc., San Diego, CA (USA). Laser Div.
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
5612939
Report Number(s):
CONF-831028-4; ON: DE84002059
Country of Publication:
United States
Language:
English