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Improved beam processing for terrestrial solar cells

Conference ·
OSTI ID:7065848
The major difficulties at present in using laser beam processing for terrestrial solar cells are (1) lack of a suitable laser for large volume cell production; and (2) expense and low throughput of conventional ion implantation, especially for the low energy (5 to 10 keV), high dose (5 x 10/sup 15/cm/sup -2/) implantation needed to obtain shallow p-n junctions. It is shown that these problems may be solved by using simple glow discharge implantation equipment and an XeCl excimer laser for annealing. Preliminary results indicate that with this combination, p/sup +/n Si solar cells with efficiencies of 15% AM1 can be readily obtained without any back surface field. These efficiencies are much better than previously reported values of 11% obtained with glow discharge implantation and ruby laser annealing. Because of the shallow implant (1kV) and high discharge current (a few mA) from the glow discharge implantation and the extremely uniform laser beam from the excimer laser, cells with very shallow junctions (approx. 0.15..mu..m) and low sheet resistivity (approx. 20 ..cap omega../sq. cm) are obtained. As a result, the front surface metal coverage of the cells can be reduced to approx. 5% while retaining very good fill factors (0.77 to 0.80). Furthermore, the blue response of the cells is extremely good.
Research Organization:
Oak Ridge National Lab., TN (USA); Helionetics, Inc., San Diego, CA (USA). Laser Div.
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
7065848
Report Number(s):
CONF-820906-3; ON: DE82022337
Country of Publication:
United States
Language:
English