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U.S. Department of Energy
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High-efficiency Si solar cells by beam processing

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94439· OSTI ID:5612906
Utilizing two recently developed beam processing techniques, i.e., gas discharge implantation and XeCl excimer laser annealing, p-n junction silicon solar cells with total area (approx.2 cm/sup 2/) AM1 efficiencies as high as 16.5% have been made. These cells are of a particularly simple structure, fabricated without any sophisticated processing steps, and subjected to no high-temperature treatment.
Research Organization:
Helionetics, Incorporated, San Diego, California 92123 and Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
5612906
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:7; ISSN APPLA
Country of Publication:
United States
Language:
English