18% efficient intrinsically passivated laser-processed silicon solar cells

Journal Article · Mon Jan 12 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97868· OSTI ID:6822741

Wood, R F; Westbrook, R D; Jellison, Jr, G E

It is demonstrated that single-crystal silicon solar cells with efficiencies greater than 18% AM1.5 can be fabricated by glow discharge implantation and pulsed excimer laser annealing. A unique characteristic of these cells is that the surfaces are passivated intrinsically to give open circuit voltages as high as 640 mV without high-temperature oxidation. The simplicity of the processing is emphasized and the prospects for raising the efficiencies to even higher values are discussed.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6822741
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CHEMICAL REACTIONS
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC DISCHARGES
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GLOW DISCHARGES
HEAT TREATMENTS
INFORMATION
ION IMPLANTATION
NUMERICAL DATA
OXIDATION
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT