Glow-discharge-implanted, thermally annealed, oxide-passivated silicon solar cells of 19% efficiency

Journal Article · Mon Feb 23 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98176· OSTI ID:6886737

Westbrook, R D; Wood, R F; Jellison, Jr, G E

Single-crystal silicon solar cells with efficiencies as high as 19.3% AM1.5 have been fabricated using simple, glow-discharge ion implantation followed by conventional furnace annealing during which an oxide layer was grown for surface passivation. Fine-line (--5 ..mu..m) photolithography was used for metallization to reduce carrier recombination at the metal-silicon interface and optimized ZnS/MgF/sub 2/ antireflection coatings were applied. The efficiencies of these cells are the highest reported to date for ion-implanted cells.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6886737
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALKALINE EARTH METAL COMPOUNDS
ANNEALING
ANTIREFLECTION COATINGS
CHALCOGENIDES
COATINGS
CRYSTALS
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC DISCHARGES
ELEMENTS
EQUIPMENT
ETCHING
EXPERIMENTAL DATA
FABRICATION
FLUORIDES
FLUORINE COMPOUNDS
GLOW DISCHARGES
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
INFORMATION
INORGANIC PHOSPHORS
ION IMPLANTATION
MAGNESIUM COMPOUNDS
MAGNESIUM FLUORIDES
MONOCRYSTALS
NUMERICAL DATA
OPTIMIZATION
PASSIVATION
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE FINISHING
ZINC COMPOUNDS
ZINC SULFIDES