Independence of Fermi-level position and valence-band edge discontinuity at GaAs-Ge(100) interfaces

Journal Article · Sun Apr 01 23:00:00 EST 1984 · Phys. Rev. Lett.; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.52.1246· OSTI ID:6832896

Chiaradia, P; Katnani, A D; Sang, Jr, H W; Bauer, R S

The valence-band discontinuity, ..delta..E/sub v/, and the Fermi-level position, E/sub F/, at GaAs-Ge(100) heterojunctions are investigated by synchrotron radiation photoemission for variations in GaAs surface As and ambient As/sub 4/ during molecular-beam epitaxial growth. E/sub F/ can be varied by 0.35 eV at the interface, and its position is uncorrelated with the constant 0.46 +- 0.05 eV measured for ..delta..E/sub v/. These results are not consistent with a defect model for heterojunction barrier heights.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6832896
• Journal Information: Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 52:14; ISSN PRLTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BREMSSTRAHLUNG
CORRELATIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY LEVELS
EPITAXY
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HETEROJUNCTIONS
INTERFACES
JUNCTIONS
METALS
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
PNICTIDES
RADIATIONS
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
SYNCHROTRON RADIATION
VALENCE