Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
- University of Illinois at Urbana-Champaign, Materials Research Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106-7090 (United States)
The valence-band discontinuity at a wurtzite GaN/AlN(0001) heterojunction is measured by x-ray photoemission spectroscopy. The method first measures the core level binding energies with respect to the valence-band maximum in both GaN and AlN bulk films. The precise location of the valence-band maximum is determined by aligning prominent features in the valence-band spectrum with calculated densities of states. Tables of core level binding energies relative to the valence-band maximum are reported for both GaN and AlN. Subsequent measurements of separations between Ga and Al core levels for thin overlayers of GaN film grown on AlN and vice versa yield a valence-band discontinuity of [Delta][ital E][sub [ital V]]=0.8[plus minus]0.3 eV in the standard type I heterojunction alignment.
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 7020145
- Journal Information:
- Applied Physics Letters; (United States), Vol. 65:5; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM NITRIDES
ELECTRONIC STRUCTURE
HETEROJUNCTIONS
GALLIUM NITRIDES
BINDING ENERGY
ENERGY GAP
ENERGY-LEVEL DENSITY
MUFFIN-TIN POTENTIAL
PHOTOEMISSION
X RADIATION
ALUMINIUM COMPOUNDS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
GALLIUM COMPOUNDS
IONIZING RADIATIONS
JUNCTIONS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
POTENTIALS
RADIATIONS
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
360606* - Other Materials- Physical Properties- (1992-)