Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy
- University of Illinois at Urbana-Champaign, Coordinated Science Laboratory and Materials Research Laboratory, 1308 West Main, Urbana, Illinois 61801 (United States)
The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward{endash}backward asymmetry was observed in the InN/GaN{endash}GaN/InN and InN/AlN{endash}AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05{plus_minus}0.25 eV, GaN/AlN=0.70{plus_minus}0.24 eV, and InN/AlN=1.81{plus_minus}0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 283784
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 18; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
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