Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction
Journal Article
·
· Appl. Phys. Lett.; (United States)
The conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as ..delta..E/sub c/=0.50 eV and ..delta..E/sub v/=0.25 eV by the angle-resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett et al.
- Research Organization:
- Materials and Molecular Research Division, Lawrence Berkeley Laboratory
- OSTI ID:
- 6706782
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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