Temperature dependence of threshold current in III-V semiconductor lasers: Experimental prediction and explanation

Journal Article · Fri Jun 01 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94634· OSTI ID:6830234

Su, C B; Olshansky, R; Manning, J; Powazinik, W

The newly developed differential carrier lifetime and threshold carrier density measurement techniques are applied to temperature-dependent measurements of the recombination rates and threshold carrier density of III-V semiconductor lasers. Quantities obtained from these measurements are used to predict the temperature dependence T/sub 0/ of the threshold current, which is in excellent agreement with T/sub 0/ observed at 20 /sup 0/C for both InGaAsP and AlGaAs lasers. The main causes for the stronger temperature sensitivity of InGaAsP material are due to Auger recombination and a smaller radiative coefficient.

• Research Organization: Optoelectronic Devices, GTE Laboratories, Incorporated, Waltham, Massachusetts 02254
• OSTI ID: 6830234
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CADMIUM ADDITIONS
CADMIUM ALLOYS
CARRIER DENSITY
CORRELATIONS
DATA
ENERGY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY