Temperature dependence of the threshold current of an InGaAsP laser under 130-ps electrical pulse pumping

Journal Article · Wed Feb 15 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94772· OSTI ID:5220556

Liu, P; Heritage, J P; Martinez, O E

We have measured the temperature dependence of the threshold current of an InGaAsP injection laser pumped by 130-ps electrical pulses. By comparing the data with the empirical rule I/sub th/ = I/sub 0/ exp(T/T/sub 0/), we have observed a T/sub 0/ of 148 K. The results indicate that we can partially separate carrier depletion processes, e.g., spontaneous radiative, Auger, or other nonradiative recombination, and carrier leakage from the fast stimulated emission process, hence, eliminate their effect on the temperature stability of the threshold current.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5220556
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PUMPING
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LOW TEMPERATURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
PUMPING
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
TRAPPING