Threshold temperature dependence of subnanosecond optically excited 1. 3-. mu. m InGaAsP lasers

Journal Article · Thu Mar 15 00:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94846· OSTI ID:5179724

Martinez, O E; Heritage, J P; Miller, B I; Dutta, N K; Nelson, R J

We report the first measurement of the temperature dependence of the relative threshold carrier density, N/sub th/, in InGaAsP-InP lasers. The characteristic temperature T/sup prime//sub 0/, defined by 1/T/sup //sub 0/ equivalentd ln N/sub th//dT, which is independent of nonradiative recombination mechanisms, is determined by transient pumping of a simple double heterostructure laser with optical pulses short (approx. =100 ps) compared to the carrier lifetime (2--3 ns). A single T/sup prime//sub 0/ as large as 120 K describes an exponential threshold dependence on temperature over a wide temperature range (160--370 K). Comparison with steady state (300 ns) excitation of the same samples shows that nonradiative recombination is responsible for the commonly observed injection laser break from a low-temperature T/sub 0/approx. =100 K to the poorer room-temperature T/sub 0/approx. =65 K. The measured T/sup //sub 0/ is smaller than a previously calculated value of approximately 200 K.

• Research Organization: Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5179724
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 44:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ARSENIC COMPOUNDS
STIMULATED EMISSION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHORUS COMPOUNDS
SEMICONDUCTOR LASERS
CURRENT DENSITY
CORRELATIONS
HETEROJUNCTIONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
NEAR INFRARED RADIATION
OPTICAL PUMPING
RECOMBINATION
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
INFRARED RADIATION
JUNCTIONS
LASERS
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)