Influence of hot carriers on the temperature dependence of threshold in 1. 3-. mu. m InGaAsP lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
Carrier heating effects are shown to contribute significantly to temperature sensitivity of threshold current in InGaAsP 1.3-..mu..m lasers. For the empirical expression J/sub th/approx.J/sub 0/ exp(T/T/sub 0/), a single value of T/sub 0/ = 90 K describes the data for 100 K
- Research Organization:
- Bell Laboratories, Incorporated, Holmdel, New Jersey 07733
- OSTI ID:
- 7080266
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature dependence of the threshold current of an InGaAsP laser under 130-ps electrical pulse pumping
Threshold temperature dependence of subnanosecond optically excited 1. 3-. mu. m InGaAsP lasers
Temperature dependence of the threshold current density in InP-Ga/sub 0. 28/In/sub 0. 72/As/sub 0. 6/P/sub 0. 4/ (lambda = 1. 3. mu. m) double heterostructure lasers
Journal Article
·
Tue Feb 14 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5220556
Threshold temperature dependence of subnanosecond optically excited 1. 3-. mu. m InGaAsP lasers
Journal Article
·
Wed Mar 14 23:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5179724
Temperature dependence of the threshold current density in InP-Ga/sub 0. 28/In/sub 0. 72/As/sub 0. 6/P/sub 0. 4/ (lambda = 1. 3. mu. m) double heterostructure lasers
Journal Article
·
Mon Oct 01 00:00:00 EDT 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:6634781
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EQUATIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEATING
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
MATHEMATICAL MODELS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EQUATIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEATING
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
MATHEMATICAL MODELS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS
THRESHOLD CURRENT