Theory of the temperature dependence of the threshold current of an InGaAsP laser

Journal Article · Sat Jun 01 04:00:00 EDT 1985 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1985.1072700· OSTI ID:6121899

Haug, A

The threshold current of an InGaAsP laser is calculated, where the radiative emission, reflection and absorption losses, and Auger recombination are considered. Moreover, the enhancement of the threshold carrier density at high temperatures is an important point. A mechanism for this enhancement is discussed. Then we obtain an excellent agreement with the measured temperature dependence of the threshold current, in particular the T /SUB o/ -values for Tgreater than or equal toT /SUB B/ and the break point T /SUB B/ . The reason for this break point is that the radiative recombination dominates for T < T /SUB B/ , whereas the strongly temperature dependent valence band Auger process becomes more and more important for T > T /SUB B/ . It is this process which causes the strong increase of the threshold current in the room temperature range.

• Research Organization: Max-Planck-Institut fur Festkorperforschung, Stuttgart
• OSTI ID: 6121899
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-21:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CALCULATION METHODS
CARRIER DENSITY
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
RECOMBINATION
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT