Structure-dependent threshold current density in InGaAsP quantum well lasers

Journal Article · Fri Dec 31 23:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93748· OSTI ID:6651381

Sugimura, A

Threshold current density is studied theoretically for InGaAsP multiple quantum well lasers by including the Auger recombination process. All the possible transitions between quantized subbands of two-dimensional carriers are taken into account in evaluating radiative and Auger processes. The Auger recombination current depends strongly on the quantum well structure, resulting in the necessity for an elaborate structure design. A design procedure is elucidated for the structure which gives the lowest threshold current density for InGaAsP multiple quantum well lasers.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6651381
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CHARGE CARRIERS
CURRENT DENSITY
CURRENTS
DATA
DESIGN
ELECTRIC CURRENTS
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
MATHEMATICAL MODELS
NUMERICAL DATA
OPTIMIZATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THEORETICAL DATA
THRESHOLD CURRENT