InGaAs PV device development for TPV power systems

Technical Report · Mon Aug 01 04:00:00 EDT 1994

OSTI ID:6827641

Wilt, D M; Fatemi, N S; Hoffman, Jr, R W; Jenkins, P P; Scheiman, D; Lowe, R; Landis, G A

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• OSTI ID: 6827641
• Report Number(s): N-95-11587; NASA-TM--106718; E--9084; NAS--1.15:106718; CNN: NAS3-27243; NAS3-27186; RTOP 233-01-0A
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LATTICE PARAMETERS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
REACTIVITY COEFFICIENTS
TEMPERATURE COEFFICIENT