InGaAs PV device development for TPV power systems

Journal Article · Thu Jan 05 04:00:00 EST 1995 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.47061· OSTI ID:174454

Wilt, D M ^[1]; Fatemi, S; Hoffman, Jr, R W ^[2]; Jenkins, P P; Scheiman, D ^[3]; Lowe, R ^[4]; Landis, G A ^[3]

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1. NASA Lewis Research Center, Cleveland, Ohio 44153 (United States)
2. Essential Research, Inc., Cleveland Ohio (United States)
3. NYMA, Inc., Brookpark Ohio (United States)
4. Kent State University, Kent Ohio (United States)

Indium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AM0) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 {degree}K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Sponsoring Organization: USDOE
• OSTI ID: 174454
• Report Number(s): CONF-940101--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 321; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
BLACKBODY RADIATION
ELECTRICAL PROPERTIES
ENERGY GAP
EPITAXY
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTOVOLTAIC CELLS
QUANTUM EFFICIENCY
TERNARY ALLOY SYSTEMS
THERMOPHOTOVOLTAIC CONVERSION
THIN FILMS