InGaAs PV device development for TPV power systems

Conference · Thu Sep 01 04:00:00 EDT 1994

OSTI ID:36443

Wilt, D M; Fatemi, N S; Hoffman, Jr, R W; Jenkins, P P; Brinker, D J; Scheiman, D; Lowe, R A; Chubb, D ^[1]

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1. Essential Research, Inc., Cleveland, OH (United States)

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• OSTI ID: 36443
• Report Number(s): N--95-20502; NASA-CP--3278; E--9083; NAS--1.55:3278; CONF-9406314--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CRYSTAL LATTICES
GALLIUM ARSENIDES
INDIUM ARSENIDES
PERFORMANCE
PHOTOVOLTAIC CELLS
SYNTHESIS
THERMAL RADIATION